DMN2004DWK
0
0
1
2
3
4
5
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
T ch , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
0.1
I D, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
6
I D , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004DWK
Document number: DS30935 Rev. 5 - 2
3 of 6
www.diodes.com
January 2014
? Diodes Incorporated
相关PDF资料
DMN2004K-7 MOSFET N-CH 20V 540MA SOT23-3
DMN2004VK-7 MOSFET DUAL N-CHAN 20V SOT-563
DMN2004WK-7 MOSFET N-CH 20V 540MA SC70-3
DMN2005DLP4K-7 MOSFET DUAL N-CH 6-DFN
DMN2005K-7 MOSFET N-CH 20V 300MA SOT23-3
DMN2005LP4K-7 MOSFET N-CH 20V 200MA 3-DFN
DMN2005LPK-7 MOSFET N-CH 20V 440MA 3-DFN
DMN2009LSS-13 MOSFET N-CH 20V 12A 8-SOIC
相关代理商/技术参数
DMN2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K-7 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004K-7-F 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification
DMN2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004TK-7 功能描述:MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004VK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004VK_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR